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RF2128
2
Typical Applications
* PCS Communication Systems * 2.5GHz ISM Band Applications * Wireless LANs * Commercial and Consumer Systems * Portable Battery Powered Equipment
MEDIUM POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1900MHz and 2200MHz, with over 100mW transmitted power, or as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation.
.315 .305
.057 MAX
1 .050
ro du ct
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 3.0V to 6.5V Supply * 100mW Linear Output Power * 25dB Small Signal Gain * 30% Efficiency * Digitally Controlled Power Down Mode * 1900MHz to 2500MHz Operation
VCC2 1 GND1 2 PD 3
U pg r
BIAS CIRCUITS
S ee
ad ed
8 VCC1 7 RF OUT 6 RF OUT 5 GND 2
P
RF IN 4
Ordering Information
RF2128 RF2128 PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board
PACKAGE BASE GND
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
R F2 12
4MAX 0MIN
.017 .013
Package Style: SOP-8-C
8P
.006 .004
.166 SQ
.017 .013
.004 .000
.180 SQ MAX
Metal lid and base, gold plated
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A3 010112
2-85
RF2128
Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Case Temperature Operating Ambient Temperature Storage Temperature
Rating
+7.5 +5.5 125 +12 20:1 -40 to +100 -40 to +85 -40 to +150
Unit
VDC V mA dBm C C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum Output Power Maximum Output Power Total CW Efficiency Small-signal Gain Second Harmonic Third Harmonic Isolation Input VSWR Input Impedance Noise Figure
Specification Min. Typ. Max.
1900 to 2500 >+20 >+23 30 25 -25 -22 15 2:1 50 7 +17 -24 -36 -44 36
Unit
Condition
T=25 C, VCC =5V, VPD =5.0V, Freq=2400MHz
Two-tone Specification
Average Two-Tone Power IM3 IM5 IM7 Two-Tone Power-Added Efficiency
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1.2
65 10
Power Down "ON" Power Down "OFF"
ad ed
Power Down Control
P
VCC
0
Power Supply
Voltage Current Current
2-86
S ee
U pg r
5 3.0 to 6.5 50 85
R F2 12
VPD =0.2V dB dBm dBc dBc dBc %
MHz dBm dBm % dB dBc dBc dB
VCC =5.0V, VPD =5.0V, PIN =-3.0dBm VCC =6.0V, VPD =5.5V, PIN =0dBm Maximum output
PEP-3dB POUT =+14dBm for each tone POUT =+14dBm for each tone POUT =+14dBm for each tone
V V
V V mA mA A
Voltage supplied to the input; device is "on" Voltage supplied to the input; device is "off" Specifications Operating Operating Idle At maximum output power Power Down
8P
Rev A3 010112
RF2128
Pin 1 Function VCC2 Description
Power supply for the driver stage and interstage matching. External matching on this pin is required to optimize the gain. The matching on this port also greatly affects the input impedance. A decoupling capacitor of 330pF is required, together with a series RC for tuning for maximum gain at the desired frequency. See the application information for details. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typical 1.2V or less at room temperature. When this pin is "high", all circuits are operating normally. A "high" is VCC. If PD is below VCC, output power and performance will be degraded. This could be used to obtain some gain control, but results are not guaranteed. RF Input. This is a 50 input, but the actual impedance depends on the matching provided on pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground. Ground connection for the output stage. Keep traces physically short and connect immediately to the ground plane for best performance. RF Output and power supply for the output stage. Bias for the output stage needs to be provided on this pin. This can be done through a quarter-wave microstrip that is RF grounded on the other end. For matching to 50, an external series microstrip line is required. Same as pin 6. Power supply for the bias circuits. An external RF bypass capacitor of 22pF is required. Keep the traces to the capacitor as short as possible, and connect the capacitor immediately to the ground plane. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required.
Interface Schematic
2 3
GND1 PD
2
POWER AMPLIFIERS
22 pF L = quarter wave, W= 10mil 15 pF RF OUT
4 5 6
RF IN GND2 RF OUT
7 8 Pkg Base
RF OUT VCC1 GND
Application Schematic 2450MHz
VCC 1 nF
U pg r
ad ed
1.5
2.4 pF 1 2 33 pF 3
P
330 pF
L= 250 mil, W= 20 mil BIAS CIRCUITS 22 pF 8 7 6 5 PACKAGE BASE L = 220 mil, W = 25 mil PCB materials: FR-4 Thickness: 0.031"
S ee
VPD POWER DOWN RF IN
6.2 pF 4 L= 175 mil, W= 10mil
Rev A3 010112
ro du ct
R F2 12
8P
2-87
RF2128
Evaluation Board Schematic 2450MHz Operation
(Download Bill of Materials from www.rfmd.com.)
2128400 Rev P1
2
POWER AMPLIFIERS
P1-1 C7 1 F C3 1 nF C4 330 pF C2 2.4 pF L=250 mil, W=20 mil 1 2 P1-3 C9 1 nF C8 330 pF 3 4 PACKAGE BASE 50 strip 100 , L=174 mil, C1 W=10 mil 6.2 pF GND BIAS CIRCUITS 8 7 6 5
P1-1
1 2
VCC GND VPD
P1-3
3
C5 22 pF RF OUT J2
L=217 mil, W=26 mil C6 16 pF (PCB mat'l: FR-4, Thickness: 0.031")
50 strip
Evaluation Board Layout 1.547" x 1.068"
2-88
S ee
U pg r
ad ed
P
ro du ct
R F2 12
Rev A3 010112
RF IN J1
8P

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